Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 2009, Vol.156 (1), p.H34
Main Authors: Chen, William Po-Nien, Su, Pin, Goto, Ken-Ichi, Diaz, Carlos H.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3
cites cdi_FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3
container_end_page
container_issue 1
container_start_page H34
container_title Journal of the Electrochemical Society
container_volume 156
creator Chen, William Po-Nien
Su, Pin
Goto, Ken-Ichi
Diaz, Carlos H.
description
doi_str_mv 10.1149/1.3005569
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3005569</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3005569</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3</originalsourceid><addsrcrecordid>eNotj71OwzAURj2ARCkMvIFXhhRfO3aSEVXlR2qoRGGObm6uhVFIkO2Bvj1FdDr6zvBJR4gbUCuAsrmDlVHKWteciYVSYIrSWbgQlyl9HifUZbUQmz3HwEm-cgop40QscRpkO_dhDPkgNz85IuUwT7Ll_DEPMkzyBac5EY4s293-YfOWrsS5xzHx9YlL8X7U66diu3t8Xt9vC9K6yQWQAk-qHLxnBLbQEHjt0JbK6dr6qrHGeI3Waa4Us3dIvcaqr6jHGsgsxe3_L8U5pci--47hC-OhA9X9NXfQnZrNL4b0SuI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs</title><source>Institute of Physics</source><creator>Chen, William Po-Nien ; Su, Pin ; Goto, Ken-Ichi ; Diaz, Carlos H.</creator><creatorcontrib>Chen, William Po-Nien ; Su, Pin ; Goto, Ken-Ichi ; Diaz, Carlos H.</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.3005569</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2009, Vol.156 (1), p.H34</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3</citedby><cites>FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Chen, William Po-Nien</creatorcontrib><creatorcontrib>Su, Pin</creatorcontrib><creatorcontrib>Goto, Ken-Ichi</creatorcontrib><creatorcontrib>Diaz, Carlos H.</creatorcontrib><title>Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotj71OwzAURj2ARCkMvIFXhhRfO3aSEVXlR2qoRGGObm6uhVFIkO2Bvj1FdDr6zvBJR4gbUCuAsrmDlVHKWteciYVSYIrSWbgQlyl9HifUZbUQmz3HwEm-cgop40QscRpkO_dhDPkgNz85IuUwT7Ll_DEPMkzyBac5EY4s293-YfOWrsS5xzHx9YlL8X7U66diu3t8Xt9vC9K6yQWQAk-qHLxnBLbQEHjt0JbK6dr6qrHGeI3Waa4Us3dIvcaqr6jHGsgsxe3_L8U5pci--47hC-OhA9X9NXfQnZrNL4b0SuI</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Chen, William Po-Nien</creator><creator>Su, Pin</creator><creator>Goto, Ken-Ichi</creator><creator>Diaz, Carlos H.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2009</creationdate><title>Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs</title><author>Chen, William Po-Nien ; Su, Pin ; Goto, Ken-Ichi ; Diaz, Carlos H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, William Po-Nien</creatorcontrib><creatorcontrib>Su, Pin</creatorcontrib><creatorcontrib>Goto, Ken-Ichi</creatorcontrib><creatorcontrib>Diaz, Carlos H.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, William Po-Nien</au><au>Su, Pin</au><au>Goto, Ken-Ichi</au><au>Diaz, Carlos H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2009</date><risdate>2009</risdate><volume>156</volume><issue>1</issue><spage>H34</spage><pages>H34-</pages><issn>0013-4651</issn><doi>10.1149/1.3005569</doi></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 2009, Vol.156 (1), p.H34
issn 0013-4651
language eng
recordid cdi_crossref_primary_10_1149_1_3005569
source Institute of Physics
title Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T21%3A11%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Series%20Resistance%20and%20Mobility%20Extraction%20Method%20in%20Nanoscale%20MOSFETs&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Chen,%20William%20Po-Nien&rft.date=2009&rft.volume=156&rft.issue=1&rft.spage=H34&rft.pages=H34-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.3005569&rft_dat=%3Ccrossref%3E10_1149_1_3005569%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-1c01fc04dffea1e519c1f26a5406285f79533f2a562e70eef6acb2a7b7cba81c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true