Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN

Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lo...

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Bibliographic Details
Published in:ECS transactions 2008-11, Vol.13 (17), p.177-183
Main Authors: Fujii, Katsushi, Ono, Masato, Iwaki, Yasuhiro, Yao, Takafumi, Ohkawa, Kazuhiro
Format: Article
Language:English
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Summary:Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3039775