Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

The "nominally" un-doped or lightly-doped channels are actually doped considerably due to the lateral distribution of dopants from Source/Drain (S/D) doping, thus forming a new source of Random Dopant Fluctuation (RDF). In this work, the unexpected RDF effect of sub-20nm UTB SOI MOSFETs is...

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Main Authors: Du, Linfeng, Deng, Hui, Du, Gang, Han, Ruqi, Zhang, Shengdong
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Deng, Hui
Du, Gang
Han, Ruqi
Zhang, Shengdong
description The "nominally" un-doped or lightly-doped channels are actually doped considerably due to the lateral distribution of dopants from Source/Drain (S/D) doping, thus forming a new source of Random Dopant Fluctuation (RDF). In this work, the unexpected RDF effect of sub-20nm UTB SOI MOSFETs is investigated by device simulation. A new method to simulate the RDF effect was introduced. The results show that a severe Vth variation due to the new RDF effect will take place when device is scaled into sub-20 nm regime, even with un-doped channel. The device parameter dependence of Vth variations of MOSFETs with un-doped channel were presented, which was found to be largely similar to that of ones with doped channel. The drain current and subthreshold fluctuations were also investigated to gain a more comprehensive insight to RDF in MOSFETs. Our results illustrated the importance of suppressing the lateral distribution of S/D dopants for scaled devices.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3096431</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3096431</sourcerecordid><originalsourceid>FETCH-LOGICAL-c104t-5f3e4a72ad8f0af167aaed5399da8cd11438e010fbced4f7036016d4d45324883</originalsourceid><addsrcrecordid>eNotkM1OwzAQhC0EEqVw4A185ZDWrh3HOUJLoVKhEmm5Rlv_CKM0ruzk0BuPjik57Wpn9GlnELqnZEIpL6d0wkgpOKMXaERLJjNRsOJy2HMpZtfoJsZvQkSyFyP0M_-CAKozwcXOKfwJwUHnfBvxqtW9MhrvT_gDWu0PeNn0quvPMvYWV74PykwXAVyL15AY0OBF4gS378-mhT9C2-Ekv0Prs0pBY_Bu-4SrzQq_barl8_YWXVloorkb5hjt0nX-mq03L6v54zpTlPAuyy0zHIoZaGkJWCoKAKNzVpYapNIpDJOGUGL36WVuC8IEoUJzzXM241KyMXr456rgYwzG1sfgDhBONSX1X3U1rYfq2C-g7GE2</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Du, Linfeng ; Deng, Hui ; Du, Gang ; Han, Ruqi ; Zhang, Shengdong</creator><creatorcontrib>Du, Linfeng ; Deng, Hui ; Du, Gang ; Han, Ruqi ; Zhang, Shengdong</creatorcontrib><description>The "nominally" un-doped or lightly-doped channels are actually doped considerably due to the lateral distribution of dopants from Source/Drain (S/D) doping, thus forming a new source of Random Dopant Fluctuation (RDF). In this work, the unexpected RDF effect of sub-20nm UTB SOI MOSFETs is investigated by device simulation. A new method to simulate the RDF effect was introduced. The results show that a severe Vth variation due to the new RDF effect will take place when device is scaled into sub-20 nm regime, even with un-doped channel. The device parameter dependence of Vth variations of MOSFETs with un-doped channel were presented, which was found to be largely similar to that of ones with doped channel. The drain current and subthreshold fluctuations were also investigated to gain a more comprehensive insight to RDF in MOSFETs. Our results illustrated the importance of suppressing the lateral distribution of S/D dopants for scaled devices.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3096431</identifier><language>eng</language><ispartof>ECS transactions, 2009, Vol.18 (1), p.77-81</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Du, Linfeng</creatorcontrib><creatorcontrib>Deng, Hui</creatorcontrib><creatorcontrib>Du, Gang</creatorcontrib><creatorcontrib>Han, Ruqi</creatorcontrib><creatorcontrib>Zhang, Shengdong</creatorcontrib><title>Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET</title><title>ECS transactions</title><description>The "nominally" un-doped or lightly-doped channels are actually doped considerably due to the lateral distribution of dopants from Source/Drain (S/D) doping, thus forming a new source of Random Dopant Fluctuation (RDF). In this work, the unexpected RDF effect of sub-20nm UTB SOI MOSFETs is investigated by device simulation. A new method to simulate the RDF effect was introduced. The results show that a severe Vth variation due to the new RDF effect will take place when device is scaled into sub-20 nm regime, even with un-doped channel. The device parameter dependence of Vth variations of MOSFETs with un-doped channel were presented, which was found to be largely similar to that of ones with doped channel. The drain current and subthreshold fluctuations were also investigated to gain a more comprehensive insight to RDF in MOSFETs. Our results illustrated the importance of suppressing the lateral distribution of S/D dopants for scaled devices.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkM1OwzAQhC0EEqVw4A185ZDWrh3HOUJLoVKhEmm5Rlv_CKM0ruzk0BuPjik57Wpn9GlnELqnZEIpL6d0wkgpOKMXaERLJjNRsOJy2HMpZtfoJsZvQkSyFyP0M_-CAKozwcXOKfwJwUHnfBvxqtW9MhrvT_gDWu0PeNn0quvPMvYWV74PykwXAVyL15AY0OBF4gS378-mhT9C2-Ekv0Prs0pBY_Bu-4SrzQq_barl8_YWXVloorkb5hjt0nX-mq03L6v54zpTlPAuyy0zHIoZaGkJWCoKAKNzVpYapNIpDJOGUGL36WVuC8IEoUJzzXM241KyMXr456rgYwzG1sfgDhBONSX1X3U1rYfq2C-g7GE2</recordid><startdate>20090306</startdate><enddate>20090306</enddate><creator>Du, Linfeng</creator><creator>Deng, Hui</creator><creator>Du, Gang</creator><creator>Han, Ruqi</creator><creator>Zhang, Shengdong</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090306</creationdate><title>Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET</title><author>Du, Linfeng ; Deng, Hui ; Du, Gang ; Han, Ruqi ; Zhang, Shengdong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c104t-5f3e4a72ad8f0af167aaed5399da8cd11438e010fbced4f7036016d4d45324883</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Du, Linfeng</creatorcontrib><creatorcontrib>Deng, Hui</creatorcontrib><creatorcontrib>Du, Gang</creatorcontrib><creatorcontrib>Han, Ruqi</creatorcontrib><creatorcontrib>Zhang, Shengdong</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Du, Linfeng</au><au>Deng, Hui</au><au>Du, Gang</au><au>Han, Ruqi</au><au>Zhang, Shengdong</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET</atitle><btitle>ECS transactions</btitle><date>2009-03-06</date><risdate>2009</risdate><volume>18</volume><issue>1</issue><spage>77</spage><epage>81</epage><pages>77-81</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>The "nominally" un-doped or lightly-doped channels are actually doped considerably due to the lateral distribution of dopants from Source/Drain (S/D) doping, thus forming a new source of Random Dopant Fluctuation (RDF). In this work, the unexpected RDF effect of sub-20nm UTB SOI MOSFETs is investigated by device simulation. A new method to simulate the RDF effect was introduced. The results show that a severe Vth variation due to the new RDF effect will take place when device is scaled into sub-20 nm regime, even with un-doped channel. The device parameter dependence of Vth variations of MOSFETs with un-doped channel were presented, which was found to be largely similar to that of ones with doped channel. The drain current and subthreshold fluctuations were also investigated to gain a more comprehensive insight to RDF in MOSFETs. Our results illustrated the importance of suppressing the lateral distribution of S/D dopants for scaled devices.</abstract><doi>10.1149/1.3096431</doi><tpages>5</tpages></addata></record>
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title Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T12%3A23%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Characteristic%20Variations%20Induced%20by%20Random%20Fluctuation%20of%20Source/Drain%20Lateral%20Distribution%20Dopant%20in%20Nano-Scale%20UTB%20SOI%20MOSFET&rft.btitle=ECS%20transactions&rft.au=Du,%20Linfeng&rft.date=2009-03-06&rft.volume=18&rft.issue=1&rft.spage=77&rft.epage=81&rft.pages=77-81&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.3096431&rft_dat=%3Ccrossref%3E10_1149_1_3096431%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c104t-5f3e4a72ad8f0af167aaed5399da8cd11438e010fbced4f7036016d4d45324883%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true