The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs (100) Surfaces

In this letter, we investigate the effects of heat treatment under NH3 ambient on the Ga-O at the interface between GaAs and high-k dielectric materials deposited by atomic layer deposition (ALD). Compared with the heat treatment results under N2 ambient, the monochromatic x-ray photoelectron spectr...

Full description

Saved in:
Bibliographic Details
Main Authors: Suh, Dong Chan, Cho, Young Dae, Ko, Dae-Hong, Chung, Kwun Bum, Cho, Mann-Ho, Lee, Yongshik
Format: Conference Proceeding
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c229t-99d27ff4207d974b269785b75054bd300661dcd90a742c2512612d4623c25fe53
cites
container_end_page 239
container_issue 1
container_start_page 233
container_title
container_volume 19
creator Suh, Dong Chan
Cho, Young Dae
Ko, Dae-Hong
Chung, Kwun Bum
Cho, Mann-Ho
Lee, Yongshik
description In this letter, we investigate the effects of heat treatment under NH3 ambient on the Ga-O at the interface between GaAs and high-k dielectric materials deposited by atomic layer deposition (ALD). Compared with the heat treatment results under N2 ambient, the monochromatic x-ray photoelectron spectroscopy (XPS) analysis reveal that the formation of Ga-O is greatly suppressed when under NH3 ambient, both at 500º C and 700º C, for HfO2. However, similar experiments for Al2O3 deposited by atomic layer deposition (ALD) show that the effect of NH3 heat treatment is minimal. We examine the different reaction mechanisms of the nitridation processes for the two different high-k dielectric materials on GaAs. Also, the capacitance-voltage (C-V) properties of metal-insulator-semiconductor capacitors (MISCAP) with Pt electrodes are experimentally examined for various annealing temperatures and ambient conditions.
doi_str_mv 10.1149/1.3118949
format conference_proceeding
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3118949</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3118949</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-99d27ff4207d974b269785b75054bd300661dcd90a742c2512612d4623c25fe53</originalsourceid><addsrcrecordid>eNotkEtLw0AUhQdRsFYX_oNZ2kXq3DuvzDKUtikUg1jXIZkHVtJEMnHhvzfRrO65h4_D4RDyCGwNIMwzrDlAaoS5IgswPE2U5vp61jJVeEvuYvxkTI24XpDX04en2xC8HWgX6EvOadfSYTQP7eD7UFk_-XkokFato1mDBae7c3OJE7ivskifgLEVffv-o-M9uQlVE_3DfJfkfbc9bfLkWOwPm-yYWEQzJMY41CEIZNoZLWpURqey1pJJUTs-FlTgrDOs0gItSkAF6IRCPj7BS74kq_9c23cx9j6UX_35UvU_JbBy2qKEct6C_wJ0mEta</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs (100) Surfaces</title><source>Institute of Physics</source><creator>Suh, Dong Chan ; Cho, Young Dae ; Ko, Dae-Hong ; Chung, Kwun Bum ; Cho, Mann-Ho ; Lee, Yongshik</creator><creatorcontrib>Suh, Dong Chan ; Cho, Young Dae ; Ko, Dae-Hong ; Chung, Kwun Bum ; Cho, Mann-Ho ; Lee, Yongshik</creatorcontrib><description>In this letter, we investigate the effects of heat treatment under NH3 ambient on the Ga-O at the interface between GaAs and high-k dielectric materials deposited by atomic layer deposition (ALD). Compared with the heat treatment results under N2 ambient, the monochromatic x-ray photoelectron spectroscopy (XPS) analysis reveal that the formation of Ga-O is greatly suppressed when under NH3 ambient, both at 500º C and 700º C, for HfO2. However, similar experiments for Al2O3 deposited by atomic layer deposition (ALD) show that the effect of NH3 heat treatment is minimal. We examine the different reaction mechanisms of the nitridation processes for the two different high-k dielectric materials on GaAs. Also, the capacitance-voltage (C-V) properties of metal-insulator-semiconductor capacitors (MISCAP) with Pt electrodes are experimentally examined for various annealing temperatures and ambient conditions.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3118949</identifier><language>eng</language><ispartof>ECS transactions, 2009, Vol.19 (1), p.233-239</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-99d27ff4207d974b269785b75054bd300661dcd90a742c2512612d4623c25fe53</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Suh, Dong Chan</creatorcontrib><creatorcontrib>Cho, Young Dae</creatorcontrib><creatorcontrib>Ko, Dae-Hong</creatorcontrib><creatorcontrib>Chung, Kwun Bum</creatorcontrib><creatorcontrib>Cho, Mann-Ho</creatorcontrib><creatorcontrib>Lee, Yongshik</creatorcontrib><title>The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs (100) Surfaces</title><title>ECS transactions</title><description>In this letter, we investigate the effects of heat treatment under NH3 ambient on the Ga-O at the interface between GaAs and high-k dielectric materials deposited by atomic layer deposition (ALD). Compared with the heat treatment results under N2 ambient, the monochromatic x-ray photoelectron spectroscopy (XPS) analysis reveal that the formation of Ga-O is greatly suppressed when under NH3 ambient, both at 500º C and 700º C, for HfO2. However, similar experiments for Al2O3 deposited by atomic layer deposition (ALD) show that the effect of NH3 heat treatment is minimal. We examine the different reaction mechanisms of the nitridation processes for the two different high-k dielectric materials on GaAs. Also, the capacitance-voltage (C-V) properties of metal-insulator-semiconductor capacitors (MISCAP) with Pt electrodes are experimentally examined for various annealing temperatures and ambient conditions.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkEtLw0AUhQdRsFYX_oNZ2kXq3DuvzDKUtikUg1jXIZkHVtJEMnHhvzfRrO65h4_D4RDyCGwNIMwzrDlAaoS5IgswPE2U5vp61jJVeEvuYvxkTI24XpDX04en2xC8HWgX6EvOadfSYTQP7eD7UFk_-XkokFato1mDBae7c3OJE7ivskifgLEVffv-o-M9uQlVE_3DfJfkfbc9bfLkWOwPm-yYWEQzJMY41CEIZNoZLWpURqey1pJJUTs-FlTgrDOs0gItSkAF6IRCPj7BS74kq_9c23cx9j6UX_35UvU_JbBy2qKEct6C_wJ0mEta</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Suh, Dong Chan</creator><creator>Cho, Young Dae</creator><creator>Ko, Dae-Hong</creator><creator>Chung, Kwun Bum</creator><creator>Cho, Mann-Ho</creator><creator>Lee, Yongshik</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090101</creationdate><title>The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs (100) Surfaces</title><author>Suh, Dong Chan ; Cho, Young Dae ; Ko, Dae-Hong ; Chung, Kwun Bum ; Cho, Mann-Ho ; Lee, Yongshik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-99d27ff4207d974b269785b75054bd300661dcd90a742c2512612d4623c25fe53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Suh, Dong Chan</creatorcontrib><creatorcontrib>Cho, Young Dae</creatorcontrib><creatorcontrib>Ko, Dae-Hong</creatorcontrib><creatorcontrib>Chung, Kwun Bum</creatorcontrib><creatorcontrib>Cho, Mann-Ho</creatorcontrib><creatorcontrib>Lee, Yongshik</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Suh, Dong Chan</au><au>Cho, Young Dae</au><au>Ko, Dae-Hong</au><au>Chung, Kwun Bum</au><au>Cho, Mann-Ho</au><au>Lee, Yongshik</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs (100) Surfaces</atitle><btitle>ECS transactions</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>19</volume><issue>1</issue><spage>233</spage><epage>239</epage><pages>233-239</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>In this letter, we investigate the effects of heat treatment under NH3 ambient on the Ga-O at the interface between GaAs and high-k dielectric materials deposited by atomic layer deposition (ALD). Compared with the heat treatment results under N2 ambient, the monochromatic x-ray photoelectron spectroscopy (XPS) analysis reveal that the formation of Ga-O is greatly suppressed when under NH3 ambient, both at 500º C and 700º C, for HfO2. However, similar experiments for Al2O3 deposited by atomic layer deposition (ALD) show that the effect of NH3 heat treatment is minimal. We examine the different reaction mechanisms of the nitridation processes for the two different high-k dielectric materials on GaAs. Also, the capacitance-voltage (C-V) properties of metal-insulator-semiconductor capacitors (MISCAP) with Pt electrodes are experimentally examined for various annealing temperatures and ambient conditions.</abstract><doi>10.1149/1.3118949</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2009, Vol.19 (1), p.233-239
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_3118949
source Institute of Physics
title The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs (100) Surfaces
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T03%3A13%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20Effect%20of%20NH3%20on%20the%20Interface%20of%20HfO2%20and%20Al2O3%20Films%20on%20GaAs%20(100)%20Surfaces&rft.btitle=ECS%20transactions&rft.au=Suh,%20Dong%20Chan&rft.date=2009-01-01&rft.volume=19&rft.issue=1&rft.spage=233&rft.epage=239&rft.pages=233-239&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.3118949&rft_dat=%3Ccrossref%3E10_1149_1_3118949%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-99d27ff4207d974b269785b75054bd300661dcd90a742c2512612d4623c25fe53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true