Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers

• Published in: ECS transactions 2009-05, Vol.19 (1), p.331-338
• Main Authors: Alptekin, Emre, Ozturk, Mehmet, Misra, Veena, Cho, Yonah, Kim, Yihwan, Chopra, Saurabh
• Format: Article
• Language: English
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3118960

Erbium silicide (ErSi2−y) formation was investigated on Si1−xCx epitaxial layers grown on Si substrates. The silicide films were formed by rapid thermal annealing of sputter deposited erbium layers. The sheet resistance of the silicide films formed on Si1−xCx epitaxial layers was found to be equal to or less than the sheet resistance of the films formed on Si epitaxial layers. At 600{degree sign}C, an average resistivity of 114 was obtained. The silicide grains were found to be epitaxially aligned to the substrate along the (100) orientation regardless of the carbon concentration. Compositional analysis of the films indicated carbon accumulation at the ErSi2−y/Si1−xCx interface with no carbon incorporation in the silicide. The films formed on Si1−xCx epitaxial layers exhibited smooth surface morphology free of pinholes contrary to the silicides formed on Si. The electron Schottky barrier height of ErSi2−y/Si1−xCx diodes was found to reduce by 80meV with 1.2%C.