Electrochemical Growth Gold Buffer Layer on H-Si(111) Surfaces and Their Applications

This paper reviews our recent work about gold electrodeposition on H-terminated Si(111). It is shown that Au(111)/Si(111) epitaxial layers are grown and that the film morphology can be varied according to the deposition conditions (potential and solution pH). At pH = 14 (cyanide solution) selective...

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Main Authors: Allongue, Philippe, Maroun, Fouad, Jurca, Hugo, Cortes, Robert, Prod'homme, Patricia, Tournerie, Nicolas
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:This paper reviews our recent work about gold electrodeposition on H-terminated Si(111). It is shown that Au(111)/Si(111) epitaxial layers are grown and that the film morphology can be varied according to the deposition conditions (potential and solution pH). At pH = 14 (cyanide solution) selective gold nucleation at the substrate monatomic step edges is observed. A homogeneous nucleation is obtained at pH 4 (chloride solution). In the former case 3D growth occurs and in the latter case ultra smooth buffer layers are obtained. Application of these substrates to formation of magnetic nanostructures with tuneable properties is demonstrated.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3120701