Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 2009, Vol.156 (8), p.H669
Main Authors: Alpass, C. R., Jain, A., Murphy, J. D., Wilshaw, P. R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003
cites cdi_FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003
container_end_page
container_issue 8
container_start_page H669
container_title Journal of the Electrochemical Society
container_volume 156
creator Alpass, C. R.
Jain, A.
Murphy, J. D.
Wilshaw, P. R.
description
doi_str_mv 10.1149/1.3151813
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3151813</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3151813</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003</originalsourceid><addsrcrecordid>eNotkD1PwzAURT2ARCkM_AOvDCnvxXYSj6h8VSplKMyRcZ6LaWpXdjqUX08Qna7uHY6uDmM3CDNEqe9wJlBhg-KMTQBQFLJSeMEuc_4eKzaynjDzSiYfEu0oDJlHxx987qM1g4-BL6Pd-rDhn0e-IpOK9SE5Y4kvYigWu31vwkAdX_khxQ0F7gOf_0T7lUyft56vfe9tDFfs3I0DXZ9yyj6eHt_nL8Xy7Xkxv18Wtiz1UDTjT9lJ0NZKiVVTOQuVltpAqayoQKDrlFSqdkQgqYSu0Q0prEFrEABiym7_uTbFnBO5dp_8zqRji9D--WixPfkQv4bPU3c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Alpass, C. R. ; Jain, A. ; Murphy, J. D. ; Wilshaw, P. R.</creator><creatorcontrib>Alpass, C. R. ; Jain, A. ; Murphy, J. D. ; Wilshaw, P. R.</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.3151813</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2009, Vol.156 (8), p.H669</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003</citedby><cites>FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Alpass, C. R.</creatorcontrib><creatorcontrib>Jain, A.</creatorcontrib><creatorcontrib>Murphy, J. D.</creatorcontrib><creatorcontrib>Wilshaw, P. R.</creatorcontrib><title>Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAURT2ARCkM_AOvDCnvxXYSj6h8VSplKMyRcZ6LaWpXdjqUX08Qna7uHY6uDmM3CDNEqe9wJlBhg-KMTQBQFLJSeMEuc_4eKzaynjDzSiYfEu0oDJlHxx987qM1g4-BL6Pd-rDhn0e-IpOK9SE5Y4kvYigWu31vwkAdX_khxQ0F7gOf_0T7lUyft56vfe9tDFfs3I0DXZ9yyj6eHt_nL8Xy7Xkxv18Wtiz1UDTjT9lJ0NZKiVVTOQuVltpAqayoQKDrlFSqdkQgqYSu0Q0prEFrEABiym7_uTbFnBO5dp_8zqRji9D--WixPfkQv4bPU3c</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Alpass, C. R.</creator><creator>Jain, A.</creator><creator>Murphy, J. D.</creator><creator>Wilshaw, P. R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2009</creationdate><title>Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon</title><author>Alpass, C. R. ; Jain, A. ; Murphy, J. D. ; Wilshaw, P. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alpass, C. R.</creatorcontrib><creatorcontrib>Jain, A.</creatorcontrib><creatorcontrib>Murphy, J. D.</creatorcontrib><creatorcontrib>Wilshaw, P. R.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alpass, C. R.</au><au>Jain, A.</au><au>Murphy, J. D.</au><au>Wilshaw, P. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2009</date><risdate>2009</risdate><volume>156</volume><issue>8</issue><spage>H669</spage><pages>H669-</pages><issn>0013-4651</issn><doi>10.1149/1.3151813</doi></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 2009, Vol.156 (8), p.H669
issn 0013-4651
language eng
recordid cdi_crossref_primary_10_1149_1_3151813
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T16%3A51%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measurements%20of%20Dislocation%20Locking%20by%20Near-Surface%20Ion-Implanted%20Nitrogen%20in%20Czochralski%20Silicon&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Alpass,%20C.%20R.&rft.date=2009&rft.volume=156&rft.issue=8&rft.spage=H669&rft.pages=H669-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.3151813&rft_dat=%3Ccrossref%3E10_1149_1_3151813%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-88134d409cc441686fc06949a025c36031fd54557fee04e20d898e51709903003%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true