Loading…
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
Saved in:
Published in: | Journal of the Electrochemical Society 2009, Vol.156 (9), p.H716 |
---|---|
Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943 |
---|---|
cites | cdi_FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943 |
container_end_page | |
container_issue | 9 |
container_start_page | H716 |
container_title | Journal of the Electrochemical Society |
container_volume | 156 |
creator | Lin, Chao-Cheng Chang, Ting-Chang Tu, Chun-Hao Chen, Wei-Ren Hu, Chih-Wei Sze, Simon M. Tseng, Tseung-Yuen Chen, Sheng-Chi Lin, Jian-Yang |
description | |
doi_str_mv | 10.1149/1.3155446 |
format | article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3155446</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3155446</sourcerecordid><originalsourceid>FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943</originalsourceid><addsrcrecordid>eNotkLtOwzAUQD2ARCkM_IFXhpTc-hF7rCoelVpAoqxEN841BCUxss2Qv6cVnY7OcobD2A2UCwBp72AhQCkp9RmblSWIQmoFF-wype-DgpHVjH2svzB-En_LIeKBR0WXKXYpdy7x4Pku8Gccg4tTytjzHQ0hTnwz-v6XRkctbya-GoYwdshfe0wD8n0kzAON-Yqde-wTXZ84Z-8P9_v1U7F9edysV9vCCVHmorLgHai2Ed43FZnKUotgtVTSa2OXShsvrZBy6dBhQ6WxSgA4TcYabaWYs9v_roshpUi-_ondgHGqoayPM2qoTzPEH8SWU6M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Lin, Chao-Cheng ; Chang, Ting-Chang ; Tu, Chun-Hao ; Chen, Wei-Ren ; Hu, Chih-Wei ; Sze, Simon M. ; Tseng, Tseung-Yuen ; Chen, Sheng-Chi ; Lin, Jian-Yang</creator><creatorcontrib>Lin, Chao-Cheng ; Chang, Ting-Chang ; Tu, Chun-Hao ; Chen, Wei-Ren ; Hu, Chih-Wei ; Sze, Simon M. ; Tseng, Tseung-Yuen ; Chen, Sheng-Chi ; Lin, Jian-Yang</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.3155446</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2009, Vol.156 (9), p.H716</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943</citedby><cites>FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4014,27914,27915,27916</link.rule.ids></links><search><creatorcontrib>Lin, Chao-Cheng</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Tu, Chun-Hao</creatorcontrib><creatorcontrib>Chen, Wei-Ren</creatorcontrib><creatorcontrib>Hu, Chih-Wei</creatorcontrib><creatorcontrib>Sze, Simon M.</creatorcontrib><creatorcontrib>Tseng, Tseung-Yuen</creatorcontrib><creatorcontrib>Chen, Sheng-Chi</creatorcontrib><creatorcontrib>Lin, Jian-Yang</creatorcontrib><title>Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkLtOwzAUQD2ARCkM_IFXhpTc-hF7rCoelVpAoqxEN841BCUxss2Qv6cVnY7OcobD2A2UCwBp72AhQCkp9RmblSWIQmoFF-wype-DgpHVjH2svzB-En_LIeKBR0WXKXYpdy7x4Pku8Gccg4tTytjzHQ0hTnwz-v6XRkctbya-GoYwdshfe0wD8n0kzAON-Yqde-wTXZ84Z-8P9_v1U7F9edysV9vCCVHmorLgHai2Ed43FZnKUotgtVTSa2OXShsvrZBy6dBhQ6WxSgA4TcYabaWYs9v_roshpUi-_ondgHGqoayPM2qoTzPEH8SWU6M</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Lin, Chao-Cheng</creator><creator>Chang, Ting-Chang</creator><creator>Tu, Chun-Hao</creator><creator>Chen, Wei-Ren</creator><creator>Hu, Chih-Wei</creator><creator>Sze, Simon M.</creator><creator>Tseng, Tseung-Yuen</creator><creator>Chen, Sheng-Chi</creator><creator>Lin, Jian-Yang</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2009</creationdate><title>Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment</title><author>Lin, Chao-Cheng ; Chang, Ting-Chang ; Tu, Chun-Hao ; Chen, Wei-Ren ; Hu, Chih-Wei ; Sze, Simon M. ; Tseng, Tseung-Yuen ; Chen, Sheng-Chi ; Lin, Jian-Yang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Chao-Cheng</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Tu, Chun-Hao</creatorcontrib><creatorcontrib>Chen, Wei-Ren</creatorcontrib><creatorcontrib>Hu, Chih-Wei</creatorcontrib><creatorcontrib>Sze, Simon M.</creatorcontrib><creatorcontrib>Tseng, Tseung-Yuen</creatorcontrib><creatorcontrib>Chen, Sheng-Chi</creatorcontrib><creatorcontrib>Lin, Jian-Yang</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Chao-Cheng</au><au>Chang, Ting-Chang</au><au>Tu, Chun-Hao</au><au>Chen, Wei-Ren</au><au>Hu, Chih-Wei</au><au>Sze, Simon M.</au><au>Tseng, Tseung-Yuen</au><au>Chen, Sheng-Chi</au><au>Lin, Jian-Yang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2009</date><risdate>2009</risdate><volume>156</volume><issue>9</issue><spage>H716</spage><pages>H716-</pages><issn>0013-4651</issn><doi>10.1149/1.3155446</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0013-4651 |
ispartof | Journal of the Electrochemical Society, 2009, Vol.156 (9), p.H716 |
issn | 0013-4651 |
language | eng |
recordid | cdi_crossref_primary_10_1149_1_3155446 |
source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
title | Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T06%3A31%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge%20Storage%20Characteristics%20of%20Mo%20Nanocrystal%20Memory%20Influenced%20by%20Ammonia%20Plasma%20Treatment&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Lin,%20Chao-Cheng&rft.date=2009&rft.volume=156&rft.issue=9&rft.spage=H716&rft.pages=H716-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.3155446&rft_dat=%3Ccrossref%3E10_1149_1_3155446%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c330t-791fc15db3ffb7e879eda196454f6892568f493442cacabe0895311c6e8986943%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |