Electrodeposition of p-Cu 2 O Layers on Co/p-Si Planar Structures

The electrodeposition of p-Cu2O layers on Co/p-Si planar structures for potential application as p/metal/p metal base transistors were investigated. The deposits were prepared from electrolytes containing lactic acid and copper sulphate and characterized by Rutherford Backscattering Spectrometry (RB...

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Bibliographic Details
Published in:ECS transactions 2009-09, Vol.23 (1), p.77-83
Main Authors: Delatorre, Rafael G., Stenger, Vagner, Zoldan, Vinicius C., Da Silva, Douglas L., Dos Santos, Sebastiao G., Viegas, Alexandre D., Pasa, Andre A.
Format: Article
Language:English
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Summary:The electrodeposition of p-Cu2O layers on Co/p-Si planar structures for potential application as p/metal/p metal base transistors were investigated. The deposits were prepared from electrolytes containing lactic acid and copper sulphate and characterized by Rutherford Backscattering Spectrometry (RBS), X - Ray Diffraction (XRD), and Transmission Electron Microscopy (TEM). The formation of Cu2O/Co Schottky interfaces was confirmed by electrical measurements.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3183704