Back-Gate Influence on the Mobility Behavior in Ultrathin FD SOI Devices

The carrier mobility in advanced ultra-thin SOI transistors with n- and p-channels was measured using the Y-function and the transconductance peak methods. The mobilities at front channel and back channel were investigated as a function of the opposite gate bias and channel width. The results confir...

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Bibliographic Details
Main Authors: Dos Santos, Carolina D., Pham-Nguyen, Loan, Cristoloveanu, Sorin, Fenouillet-Béranger, Claire, Martino, João A.
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The carrier mobility in advanced ultra-thin SOI transistors with n- and p-channels was measured using the Y-function and the transconductance peak methods. The mobilities at front channel and back channel were investigated as a function of the opposite gate bias and channel width. The results confirm that the mobility extracted from the Y-function is greatly overestimated when the opposite channel is activated. The experiments also show that the electron mobility is higher at the back channel than at the front channel. Finally, a decrease in mobility is observed in narrower channels.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3183767