Copper Decoration and Etching for Delineation of Crystal Defects in Thick SOI

The standard method for the delineation of crystal defects in the thin silicon film of Silicon-On-Insulator (SOI) wafers is preferential etching with solutions like the dilute Secco etch. Copper decoration, prior to etching, improves defect delineation by magnifying even small defects. However, arte...

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Bibliographic Details
Main Authors: Idrisi, Hanan, Riedmüller, Stefan, Zoller, Jochen, Kolbesen, B.
Format: Conference Proceeding
Language:English
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Summary:The standard method for the delineation of crystal defects in the thin silicon film of Silicon-On-Insulator (SOI) wafers is preferential etching with solutions like the dilute Secco etch. Copper decoration, prior to etching, improves defect delineation by magnifying even small defects. However, artefact formation may contribute to deceptively high defect densities. Results are presented of studies concerning the design and improvement of copper decoration of crystal defects using different preferential etching solutions. Defects with and without a halo were characterized. Differences in the defect densities were obtained after etching with varying etching solutions.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3204396