Highly Conformal ALD of ZrO 2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process

An alternative Zr source to tetrakis(ethylmethylamino)zirconium (TEMAZr) was evaluated in this study to develop more thermally robust 300mm ZrO2 ALD process. It was observed that a transition from ALD to CVD takes place at approximately 340åC susceptor temperature. This temperature is significantly...

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Bibliographic Details
Published in:ECS transactions 2009-09, Vol.25 (4), p.201-207
Main Authors: Senzaki, Yoshi, Okuyama, Yoshi, Kim, Gi, Kim, H. Y., Barelli, Carl, Lindner, Johannes, Karim, Zia, Ramanathan, Sasangan
Format: Article
Language:English
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Summary:An alternative Zr source to tetrakis(ethylmethylamino)zirconium (TEMAZr) was evaluated in this study to develop more thermally robust 300mm ZrO2 ALD process. It was observed that a transition from ALD to CVD takes place at approximately 340åC susceptor temperature. This temperature is significantly higher than that for the commonly used TEMAZr-based ALD process by approximately 40åC. Excellent step coverage of near 100% of ALD ZrO2 has been achieved in 40:1 aspect ratio structures using this new ZrO2 ALD process. ZrO2 ALD films of 5.5nm thickness demonstrated a low leakage current of 2x10-9A/cm2 at 1.2V.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3205055