Rare-Earth Based Oxide and Nitride Thin Films Employing Volatile Homoleptic Guanidinate Precursors

The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300 - 7...

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Main Authors: Milanov, Andrian P., Thiede, Tobias, Hellwig, Malte, Parala, Harish, Bock, Claudia, Becker, Hans-Werner, Ngwashi, Divine, Cross, Richard, Paul, Shashi, Kunze, Ulrich, Fischer, Roland, Devi, Anjana
Format: Conference Proceeding
Language:English
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Summary:The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300 - 700{degree sign}C. Employing a multi-technique approach (XRD, SEM, AFM, EDX, RBS, SNMS, SE, C-V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, optical and electrical properties. In addition, the use of 1 as single source precursor for the MOCVD of GdN thin films is also demonstrated.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3207585