Fabrication and Characterizations of Nanorod Light Emitting Diode Arrays Using Nanosphere Lithography

In this paper, by sping-coating a mono layer of nanospheres (nanoparticles) on top of the sample, the technology of nanosphere lithography is developed and applied to GaN based LED epi-structures. By etching the p-type GaN further through the active region, p-i-n nanorods are exposed all over the me...

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Main Authors: Ke, Min-Yung, Wang, Cheng-Yin, Chen, Liang-Yi, Chen, Hung-Hsien, Chiang, Hung-Li, Cheng, Yun-Wei, Hsieh, Min-Yan, Chen, Cheng-Pin, Huang, JianJang
Format: Conference Proceeding
Language:English
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Summary:In this paper, by sping-coating a mono layer of nanospheres (nanoparticles) on top of the sample, the technology of nanosphere lithography is developed and applied to GaN based LED epi-structures. By etching the p-type GaN further through the active region, p-i-n nanorods are exposed all over the mesa area. By inserting a spacer layer in between rods, nanrod LED arrays can be realized without shorting the p-type contact to n-GaN. The electrical and optical properties of the InGaN/GaN-based nano-devices are investigated at room temperatures.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3237012