Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric on InP Substrate

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2010, Vol.157 (3), p.G71
Main Authors: Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C.
Format: Article
Language:eng ; jpn
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ISSN:0013-4651
DOI:10.1149/1.3273197