Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2010, Vol.13 (5), p.H159
Main Authors: Rahaman, S. Z., Maikap, S., Chiu, H.-C., Lin, C.-H., Wu, T.-Y., Chen, Y.-S., Tzeng, P.-J., Chen, F., Kao, M.-J., Tsai, M.-J.
Format: Article
Language:eng ; jpn
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ISSN:1099-0062
DOI:10.1149/1.3339449