Polymer-Bound PAGs for EUV Lithography

This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound P...

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Bibliographic Details
Main Authors: Thackeray, James W., Aqad, Emad, Kang, Su Jin, Spear-Alfonso, Kathleen
Format: Conference Proceeding
Language:English
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Summary:This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 24nm half pitch resolution with an LWR of 3.8nm and a photospeed of 11mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3360664