Polymer-Bound PAGs for EUV Lithography

This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound P...

Full description

Saved in:
Bibliographic Details
Main Authors: Thackeray, James W., Aqad, Emad, Kang, Su Jin, Spear-Alfonso, Kathleen
Format: Conference Proceeding
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c229t-7cb23773b5bb934630cad58f76f703945fc8f9765fd2e5c579577717238d92c43
cites
container_end_page 496
container_issue 1
container_start_page 489
container_title
container_volume 27
creator Thackeray, James W.
Aqad, Emad
Kang, Su Jin
Spear-Alfonso, Kathleen
description This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 24nm half pitch resolution with an LWR of 3.8nm and a photospeed of 11mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.
doi_str_mv 10.1149/1.3360664
format conference_proceeding
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3360664</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3360664</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-7cb23773b5bb934630cad58f76f703945fc8f9765fd2e5c579577717238d92c43</originalsourceid><addsrcrecordid>eNotj8FKAzEURYMoWKsL_2BWgovUJC95L1nWUqswYBfWbZjJTGylNSWpi_l7FWd17uJw4TB2K8VMSu0e5AwABaI-YxPpwHIkoPNxG4vqkl2V8ikE_uo0YXfrtB8OfeaP6furq9bzValiytVy817Vu9M2feTmuB2u2UVs9qW_GTllm6fl2-KZ16-rl8W85kEpd-IUWgVE0Jq2daARRGg6YyNhJAFOmxhsdIQmdqo3wZAzRCRJge2cChqm7P7_N-RUSu6jP-bdocmDl8L_BXrpx0D4AcKwP8I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Polymer-Bound PAGs for EUV Lithography</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Thackeray, James W. ; Aqad, Emad ; Kang, Su Jin ; Spear-Alfonso, Kathleen</creator><creatorcontrib>Thackeray, James W. ; Aqad, Emad ; Kang, Su Jin ; Spear-Alfonso, Kathleen</creatorcontrib><description>This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 24nm half pitch resolution with an LWR of 3.8nm and a photospeed of 11mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3360664</identifier><language>eng</language><ispartof>ECS transactions, 2010, Vol.27 (1), p.489-496</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-7cb23773b5bb934630cad58f76f703945fc8f9765fd2e5c579577717238d92c43</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Thackeray, James W.</creatorcontrib><creatorcontrib>Aqad, Emad</creatorcontrib><creatorcontrib>Kang, Su Jin</creatorcontrib><creatorcontrib>Spear-Alfonso, Kathleen</creatorcontrib><title>Polymer-Bound PAGs for EUV Lithography</title><title>ECS transactions</title><description>This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 24nm half pitch resolution with an LWR of 3.8nm and a photospeed of 11mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotj8FKAzEURYMoWKsL_2BWgovUJC95L1nWUqswYBfWbZjJTGylNSWpi_l7FWd17uJw4TB2K8VMSu0e5AwABaI-YxPpwHIkoPNxG4vqkl2V8ikE_uo0YXfrtB8OfeaP6furq9bzValiytVy817Vu9M2feTmuB2u2UVs9qW_GTllm6fl2-KZ16-rl8W85kEpd-IUWgVE0Jq2daARRGg6YyNhJAFOmxhsdIQmdqo3wZAzRCRJge2cChqm7P7_N-RUSu6jP-bdocmDl8L_BXrpx0D4AcKwP8I</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Thackeray, James W.</creator><creator>Aqad, Emad</creator><creator>Kang, Su Jin</creator><creator>Spear-Alfonso, Kathleen</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100101</creationdate><title>Polymer-Bound PAGs for EUV Lithography</title><author>Thackeray, James W. ; Aqad, Emad ; Kang, Su Jin ; Spear-Alfonso, Kathleen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-7cb23773b5bb934630cad58f76f703945fc8f9765fd2e5c579577717238d92c43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Thackeray, James W.</creatorcontrib><creatorcontrib>Aqad, Emad</creatorcontrib><creatorcontrib>Kang, Su Jin</creatorcontrib><creatorcontrib>Spear-Alfonso, Kathleen</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Thackeray, James W.</au><au>Aqad, Emad</au><au>Kang, Su Jin</au><au>Spear-Alfonso, Kathleen</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Polymer-Bound PAGs for EUV Lithography</atitle><btitle>ECS transactions</btitle><date>2010-01-01</date><risdate>2010</risdate><volume>27</volume><issue>1</issue><spage>489</spage><epage>496</epage><pages>489-496</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 24nm half pitch resolution with an LWR of 3.8nm and a photospeed of 11mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.</abstract><doi>10.1149/1.3360664</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2010, Vol.27 (1), p.489-496
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_3360664
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title Polymer-Bound PAGs for EUV Lithography
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T11%3A45%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Polymer-Bound%20PAGs%20for%20EUV%20Lithography&rft.btitle=ECS%20transactions&rft.au=Thackeray,%20James%20W.&rft.date=2010-01-01&rft.volume=27&rft.issue=1&rft.spage=489&rft.epage=496&rft.pages=489-496&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.3360664&rft_dat=%3Ccrossref%3E10_1149_1_3360664%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-7cb23773b5bb934630cad58f76f703945fc8f9765fd2e5c579577717238d92c43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true