Cross-Sectional UV-Raman Measurement for Obtaining Two-Dimensional Channel Stress Profile in Extremely High-Performance pMOSFETs

The two-dimensional channel-stress profiles in extremely high performance p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were evaluated by cross-sectional UV-Raman spectroscopy. We found the channel length dependence; the compressive stress in channel Si induced by compressive...

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Main Authors: Akamatsu, Hiroaki, Takei, Munehisa, Kosemura, Daisuke, Nagata, Kohki, Mayuzumi, Satoru, Yamakawa, Shinya, Wakabayashi, Hitoshi, Ogura, Atsushi
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The two-dimensional channel-stress profiles in extremely high performance p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were evaluated by cross-sectional UV-Raman spectroscopy. We found the channel length dependence; the compressive stress in channel Si induced by compressive stress liner and SiGe embedded in the source and drain regions increased with reducing channel length from 5 um to 0.5 um. The compressive stress promoted the electrical properties of pMOSFET. The effect of high-k and metal gate on the channel stress was investigated by measuring the stress before and after the gate stack fabrication. Furthermore, we confirmed the difference of the two-dimensional channel-stress profile between (100) Si and (110) Si. This was achieved by the combination of cleavage and focused ion beam etching.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3375585