Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

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Published in:Electrochemical and solid-state letters 2010, Vol.13 (9), p.H313
Main Authors: Salas-Villasenor, A. L., Mejia, I., Hovarth, J., Alshareef, H. N., Cha, D. K., Ramirez-Bon, R., Gnade, B. E., Quevedo-Lopez, M. A.
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cited_by cdi_FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363
cites cdi_FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363
container_end_page
container_issue 9
container_start_page H313
container_title Electrochemical and solid-state letters
container_volume 13
creator Salas-Villasenor, A. L.
Mejia, I.
Hovarth, J.
Alshareef, H. N.
Cha, D. K.
Ramirez-Bon, R.
Gnade, B. E.
Quevedo-Lopez, M. A.
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doi_str_mv 10.1149/1.3456551
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3456551</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3456551</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363</originalsourceid><addsrcrecordid>eNotkD1PwzAURT2ARCkM_AOvDCl5Sew0IwpNqVTEEubIH8_UyIkr2wgq8eNpodO9uro6wyHkDvIFQNU8wKKsGGcMLsgM8qbJ8pwXV-Q6xo_8WBmHGfnZjHuhEvWGrkVC-mTRoUrBKmon2ooQLAb64qV1Nh1O29Z_0R7HPQaRPgPSdiec8u84WY203x0fnXUj7YOYoo3Jh0iND7Rz-G2lQ7r64_vJqnhDLo1wEW_POSdv3apvn7Pt63rTPm4zVRRNykCXVSml1KaqgAPjvFZLtdQNN6YQWoNUx4HpellLzgC1gUo3NTOFRK5LXs7J_T9XBR9jQDPsgx1FOAyQDydVAwxnVeUv1blfhw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Salas-Villasenor, A. L. ; Mejia, I. ; Hovarth, J. ; Alshareef, H. N. ; Cha, D. K. ; Ramirez-Bon, R. ; Gnade, B. E. ; Quevedo-Lopez, M. A.</creator><creatorcontrib>Salas-Villasenor, A. L. ; Mejia, I. ; Hovarth, J. ; Alshareef, H. N. ; Cha, D. K. ; Ramirez-Bon, R. ; Gnade, B. E. ; Quevedo-Lopez, M. A.</creatorcontrib><identifier>ISSN: 1099-0062</identifier><identifier>DOI: 10.1149/1.3456551</identifier><language>eng</language><ispartof>Electrochemical and solid-state letters, 2010, Vol.13 (9), p.H313</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363</citedby><cites>FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4021,27921,27922,27923</link.rule.ids></links><search><creatorcontrib>Salas-Villasenor, A. L.</creatorcontrib><creatorcontrib>Mejia, I.</creatorcontrib><creatorcontrib>Hovarth, J.</creatorcontrib><creatorcontrib>Alshareef, H. N.</creatorcontrib><creatorcontrib>Cha, D. K.</creatorcontrib><creatorcontrib>Ramirez-Bon, R.</creatorcontrib><creatorcontrib>Gnade, B. E.</creatorcontrib><creatorcontrib>Quevedo-Lopez, M. A.</creatorcontrib><title>Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics</title><title>Electrochemical and solid-state letters</title><issn>1099-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAURT2ARCkM_AOvDCl5Sew0IwpNqVTEEubIH8_UyIkr2wgq8eNpodO9uro6wyHkDvIFQNU8wKKsGGcMLsgM8qbJ8pwXV-Q6xo_8WBmHGfnZjHuhEvWGrkVC-mTRoUrBKmon2ooQLAb64qV1Nh1O29Z_0R7HPQaRPgPSdiec8u84WY203x0fnXUj7YOYoo3Jh0iND7Rz-G2lQ7r64_vJqnhDLo1wEW_POSdv3apvn7Pt63rTPm4zVRRNykCXVSml1KaqgAPjvFZLtdQNN6YQWoNUx4HpellLzgC1gUo3NTOFRK5LXs7J_T9XBR9jQDPsgx1FOAyQDydVAwxnVeUv1blfhw</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>Salas-Villasenor, A. L.</creator><creator>Mejia, I.</creator><creator>Hovarth, J.</creator><creator>Alshareef, H. N.</creator><creator>Cha, D. K.</creator><creator>Ramirez-Bon, R.</creator><creator>Gnade, B. E.</creator><creator>Quevedo-Lopez, M. A.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2010</creationdate><title>Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics</title><author>Salas-Villasenor, A. L. ; Mejia, I. ; Hovarth, J. ; Alshareef, H. N. ; Cha, D. K. ; Ramirez-Bon, R. ; Gnade, B. E. ; Quevedo-Lopez, M. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Salas-Villasenor, A. L.</creatorcontrib><creatorcontrib>Mejia, I.</creatorcontrib><creatorcontrib>Hovarth, J.</creatorcontrib><creatorcontrib>Alshareef, H. N.</creatorcontrib><creatorcontrib>Cha, D. K.</creatorcontrib><creatorcontrib>Ramirez-Bon, R.</creatorcontrib><creatorcontrib>Gnade, B. E.</creatorcontrib><creatorcontrib>Quevedo-Lopez, M. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Electrochemical and solid-state letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Salas-Villasenor, A. L.</au><au>Mejia, I.</au><au>Hovarth, J.</au><au>Alshareef, H. N.</au><au>Cha, D. K.</au><au>Ramirez-Bon, R.</au><au>Gnade, B. E.</au><au>Quevedo-Lopez, M. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics</atitle><jtitle>Electrochemical and solid-state letters</jtitle><date>2010</date><risdate>2010</risdate><volume>13</volume><issue>9</issue><spage>H313</spage><pages>H313-</pages><issn>1099-0062</issn><doi>10.1149/1.3456551</doi><oa>free_for_read</oa></addata></record>
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language eng
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title Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T13%3A55%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20Gate%20Dielectric%20in%20Carrier%20Mobility%20in%20Low%20Temperature%20Chalcogenide%20Thin%20Film%20Transistors%20for%20Flexible%20Electronics&rft.jtitle=Electrochemical%20and%20solid-state%20letters&rft.au=Salas-Villasenor,%20A.%20L.&rft.date=2010&rft.volume=13&rft.issue=9&rft.spage=H313&rft.pages=H313-&rft.issn=1099-0062&rft_id=info:doi/10.1149/1.3456551&rft_dat=%3Ccrossref%3E10_1149_1_3456551%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-1d343bbbdf441615667c8c8d96ff2add1bc7c85d787b651edf14d975f2be6d363%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true