Collector Ideality Factor and Emitter-Base Tunneling Energy at InP/InGaAs Heterojunction Bipolar Transistors

This work shows that the ideality factor of the tunneling coefficient at the InP/InGaAs HBTs can be approximated by 7kT/E00, where E00 is the tunneling energy of the electrons through the abrupt emitter-base heterojunction. Therefore, the ideality factor of the collector current is dependent, practi...

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Bibliographic Details
Main Authors: Sachelarie, Danut, Predusca, Gabriel M.
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:This work shows that the ideality factor of the tunneling coefficient at the InP/InGaAs HBTs can be approximated by 7kT/E00, where E00 is the tunneling energy of the electrons through the abrupt emitter-base heterojunction. Therefore, the ideality factor of the collector current is dependent, practically, only on the emitter doping concentration. The theoretical results are in good accord with measured HBT IC-Gummel plots.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3474178