Protection Layer Effects on the Device Performance of Oxide/Organic Hybrid TFTs

• Main Authors: Yang, Shinhyuk, Ko Park, Sang-Hee, Ryu, MinKi, Cho, Doo-Hee, Hwang, Chi-Sun, Yoon, Sung-Min, Byun, Chunwon, Cho, Kyoung Ik, Kwon, Ohsang, Kim, Se-Hyun, Park, Chan-Eon, Jang, Jin
• Format: Conference Proceeding
• Language: English
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3481228

We fabricated oxide and oxide/organic hybrid TFTs on the glass substrate using the In-Ga-Zn-O (IGZO) as an active layer, and Al2O3 and PVP-PMMA co polymer as gate insulators, respectively. The Protection Layer (PL) for the oxide active was adopted to improve and understand the hysteresis characteristics of these oxide based TFTs. By adopting the PL layer, we can obtain the improved saturation mobility (usat) and sub-threshold swing (SS) compared to the without PL device from 17.63 cm2/Vs and 0.19 V/decade to 20.43 cm2/Vs 0.13 V/decade, respectively. The hysteresis characteristics with clock-wise direction were also dramatically improved in the PL process device from 1.22 V to the 0.02 V. We believe that this phenomenon is related to the contamination or damage of back channel surface of oxide semiconductor by photo-resist, solvent, and etchant that can generate the trap sites in the oxide active layer.