Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor

Low-temperature epitaxial Si, SiGe, and SiC films were grown in a 300mm cold-wall UHV/CVD reactor on (100) silicon wafers (bulk and SOI) at temperatures ranging from 300 to 800 °C using disilane, germane and methylsilane. Four key advantages of UHV/CVD over RPCVD are demonstrated: (i) higher structu...

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Bibliographic Details
Published in:ECS transactions 2010-10, Vol.33 (6), p.149-154
Main Authors: Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Murphy, Richard J., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay
Format: Article
Language:English
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Summary:Low-temperature epitaxial Si, SiGe, and SiC films were grown in a 300mm cold-wall UHV/CVD reactor on (100) silicon wafers (bulk and SOI) at temperatures ranging from 300 to 800 °C using disilane, germane and methylsilane. Four key advantages of UHV/CVD over RPCVD are demonstrated: (i) higher structural quality of epitaxial Si using disilane as a precursor, (ii) highly controlled growth of ultra-thin Si down to ~ 6 Aå, (iii) planar growth of SiGe at ultra low temperature (< 375 ºC), and (iv) planar growth of germanium at temperatures of less than 350 ºC.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3487543