Integration and Frequency Dependent Parametric Modeling of Through Silicon via Involved in High Density 3D Chip Stacking

• Main Authors: Cadix, Lionel, Fuchs, Christine, Rousseau, Maxime, Leduc, Patrick, Chaabouni, Hamed, Thuaire, Aurelie, Brocard, Melanie, Valentian, Alexandre, Farcy, Alexis, Bermond, Cedric, Sillon, Nicolas, Ancey, Pascal, Fléchet, Bernard
• Format: Conference Proceeding
• Language: English
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3501030

Evaluation of Through Silicon Via (TSV) electrical performance is hardly required today to improve heterogeneous 3D chip performance in the frame of a "more than Moore" approach. Accurate modeling of TSV is consequently essential to perform design optimizations and process tuning. This paper proposes a methodology based on RF characterizations and simulations, leading to a frequency dependent analytical model including MOS effect of high aspect ratio TSV. Specific test structures integrated on both floating Si bulk and CMOS 65 nm active wafers according to a face-to-face Via Last After Bonding process enable C(V) and RF measurements. TSV equivalent model including all substrate effects is proposed according to CMOS 65 nm specificities (voltage, frequency, dimensions and Si conductivity) and implemented in SPICE simulator to predict TSV impact on signal propagation.