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Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

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Bibliographic Details
Published in:	Journal of the Electrochemical Society 2011, Vol.158 (5), p.G103
Main Authors:	Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P. K.
Format:	Article
Language:	English
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Online Access:	Get full text
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