Device Performance and Photoelectron Resonance in Double-Barrier Superlattice Infrared Photodetectors

A double-barrier superlattice infrared photodetector (SLIP) that contains a superlattice sandwiched by the thin and thick barriers has been developed. Photoelectrons can bounce back and forth between the two barriers and inject through the thin barrier to enhance the photocurrent. In comparison with...

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Published in:Journal of the Electrochemical Society 2011-01, Vol.158 (4), p.H370-H373
Main Authors: Lin, Shih-Hung, Feng, David Jui-Yang, Lu, Jen-Hsiang, Wu, Kun-Jheng, Lay, Tsong-Sheng, Kuan, Chieh-Hsiung
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description A double-barrier superlattice infrared photodetector (SLIP) that contains a superlattice sandwiched by the thin and thick barriers has been developed. Photoelectrons can bounce back and forth between the two barriers and inject through the thin barrier to enhance the photocurrent. In comparison with the single-barrier SLIP, this structure shows at least one-order higher magnitude of photocurrent at low bias and the associated 80 K detectivity is also increased for more than one order. This detector also shows high-temperature operation above 100 K with an appropriate detectivity at low bias (1.1 × 10 9 cm Hz 1/2 /W at 0.17 V). A simple photoelectron resonance model is given to analyze the resonance phenomenon. It is found that photoelectrons excited by 9.2 µm wavelength can resonate in the bottom of the second miniband by 42 to 49 times from 0.05 to 0.15 V to enhance the photocurrent dramatically.
doi_str_mv 10.1149/1.3547700
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