Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2011, Vol.158 (4), p.H417
Main Authors: Gee Kim, Wan, Gyu Sung, Min, Joo Kim, Sook, Hee Yoo, Jong, One Youn, Te, Won Oh, Jang, Nam Kim, Jung, Gu Gyun, Byung, Wan Kim, Taeh, Ho Kim, Chi, Young Byun, Jun, Kim, Won, Sig Joo, Moon, Sung Roh, Jae, Ki Park, Sung
Format: Article
Language:English
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ISSN:0013-4651
DOI:10.1149/1.3552701