Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2011, Vol.14 (5), p.H205
Main Authors: Lim, Wantae, Jeong, Jae-Hyun, Lee, Heon-Bok, Lee, Jae-Hoon, Hur, Seung-Bae, Ryu, Jong-Kyu, Kim, Ki-Se, Kim, Tae-Hyung, Song, Sang Yeob, Hur, Won-Goo, Kim, Sung Tae, Pearton, S. J.
Format: Article
Language:English
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ISSN:1099-0062
DOI:10.1149/1.3555069