Influence of the Pressure on ZnO:Al Film Deposited by DC Magnetron Reactive Sputtering

• Main Authors: Yu, Song, Yang, H. D., Huang, Bo, Shi, J.D., Zeng, L. X.
• Format: Conference Proceeding
• Language: English
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3567636

Films were deposited on glass substrates by a DC magnetron sputtering method using a ZnO target doped with 2wt% Al2O3. Effects of sputtering on the structural, optical, and electrical properties of ZnO:Al films were investigated. The results showed that film's crystalline quality could be improved along the c-axis direction by increasing the sputtering pressure. Below 12.5Pa, grain size became more refined and the film's surface became more uniform. The resistivity of ZnO:Al films reached a minimum of 1.66×10−3 Ω·cm at 12.5Pa. The films' average transmittances were higher than 80% in the visible (400nm-800nm) region. Furthermore, the bathochromic shift phenomenon of absorption edge had been found in this process. Consequently, the properties of optical, electrical degraded with the increase of pressure above 12.5 Pa.