LDMOS Thermal SOA Investigation of a Novel 800V Multiple RESURF with Linear P-top Rings

In this paper, Technology Computer-Aided Design (TCAD) is used to investigate the thermal characteristic and Thermal Safe Operating Area (T-SOA) of a novel 800V Multiple RESURF LDMOS with linear P-top Rings. Two methods of critical temperature extraction are presented and the agreement between these...

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Bibliographic Details
Main Authors: Herlambang, Aloysius P., Sheu, Gene, Guo, Yufeng, Wasisto, Hutomo Suryo
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:In this paper, Technology Computer-Aided Design (TCAD) is used to investigate the thermal characteristic and Thermal Safe Operating Area (T-SOA) of a novel 800V Multiple RESURF LDMOS with linear P-top Rings. Two methods of critical temperature extraction are presented and the agreement between these two methods is proven. The effects of Initial Front Rise time (IFR) and other parameters on the thermal characteristic of the device are inspected. Finally, the simulation result has an agreement with the analytic solution. Therefore, the analytic solution can replace the 3D simulation for large device which is not able to be performed using current available TCAD tools.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3567702