Problems of N-type Doped Regions in Germanium, their Solutions, and How to Beat the ITRS Roadmap

In this paper the authors discuss the issues surrounding the formation of ultrashallow n-type junctions in Ge. In general the n-type dopants are relatively difficult to activate and diffuse quickly, leading to high access resistances and limited capability to reduce the device dimensions, respective...

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Bibliographic Details
Main Authors: Duffy, Ray, Shayesteh, Maryam, White, Mary, Kearney, John, Kelleher, Anne-Marie
Format: Conference Proceeding
Language:English
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Summary:In this paper the authors discuss the issues surrounding the formation of ultrashallow n-type junctions in Ge. In general the n-type dopants are relatively difficult to activate and diffuse quickly, leading to high access resistances and limited capability to reduce the device dimensions, respectively. Sheet resistance (Rs) was calculated for n-type box-like profiles in Si and Ge. To achieve ITRS Roadmap targets in Si an active doping concentration of 1.5-2×1020 cm-3 is required, but due to the enhanced electron mobility it is predicted approximately 6×1019 cm-3 is sufficient in Ge.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3568860