Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors

The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Ca...

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Bibliographic Details
Published in:ECS transactions 2011-04, Vol.35 (2), p.297-304
Main Authors: Pavunny, Shojan P., Thomas, R., Kalkur, T.S., Schubert, Jurgen, Fachini, E., Katiyar, Ram S.
Format: Article
Language:English
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Summary:The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Capacitance-Voltage characteristics showed negligible hysteresis, ~8 mV. The extracted dielectric constant (k) of LGO layer from the EOT-physical thickness plot was ~21.6 ± 1.7. LGO layers with EOT of 3nm had a Jg ~ 3 x 10 -8 A/cm 2 at accumulation (Vg=V FB -1). The estimated interfacial trap density at the flatband voltage as determined by Lehovec method was in the range 10 12 eV -1 cm -2 . N-channel LGO metal-oxide-semiconductor field effect transistors (MOSFET) have been fabricated and electrically characterized. The threshold voltage (V t ) was ~0.3V.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3568872