Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors

The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Ca...

Full description

Saved in:
Bibliographic Details
Published in:ECS transactions 2011-04, Vol.35 (2), p.297-304
Main Authors: Pavunny, Shojan P., Thomas, R., Kalkur, T.S., Schubert, Jurgen, Fachini, E., Katiyar, Ram S.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c742-2f4236c84e5f1d58a9a2293c5496e245f6c9eb771d5b119877f60b2f9087a0c53
cites
container_end_page 304
container_issue 2
container_start_page 297
container_title ECS transactions
container_volume 35
creator Pavunny, Shojan P.
Thomas, R.
Kalkur, T.S.
Schubert, Jurgen
Fachini, E.
Katiyar, Ram S.
description The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Capacitance-Voltage characteristics showed negligible hysteresis, ~8 mV. The extracted dielectric constant (k) of LGO layer from the EOT-physical thickness plot was ~21.6 ± 1.7. LGO layers with EOT of 3nm had a Jg ~ 3 x 10 -8 A/cm 2 at accumulation (Vg=V FB -1). The estimated interfacial trap density at the flatband voltage as determined by Lehovec method was in the range 10 12 eV -1 cm -2 . N-channel LGO metal-oxide-semiconductor field effect transistors (MOSFET) have been fabricated and electrically characterized. The threshold voltage (V t ) was ~0.3V.
doi_str_mv 10.1149/1.3568872
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3568872</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3568872</sourcerecordid><originalsourceid>FETCH-LOGICAL-c742-2f4236c84e5f1d58a9a2293c5496e245f6c9eb771d5b119877f60b2f9087a0c53</originalsourceid><addsrcrecordid>eNotkDtPwzAUhS0EEqUw8A-8MqT4Eb9GFDUtUqQu2aMbxyaGNEF2Fvj1pDTTPbrnnG84CD1TsqM0N690x4XUWrEbtKGG60wqrm5XLbRk9-ghpU9C5BJXG-RKaGOwMIdpxDB2eD84O18-Ay56iGBnF8Pv1Z88PoaPPvvCFRy6E-a47sOIyzCc03-5DG5YEN4vDFxHGFNI8xTTI7rzMCT3tN4tqst9XRyz6nR4L96qzKqcZcznjEurcyc87YQGA4wZbkVupGO58NIa1yq1eC2lRivlJWmZN0QrIFbwLXq5Ym2cUorON98xnCH-NJQ0l3ka2qzz8D9YjVY_</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors</title><source>Institute of Physics</source><creator>Pavunny, Shojan P. ; Thomas, R. ; Kalkur, T.S. ; Schubert, Jurgen ; Fachini, E. ; Katiyar, Ram S.</creator><creatorcontrib>Pavunny, Shojan P. ; Thomas, R. ; Kalkur, T.S. ; Schubert, Jurgen ; Fachini, E. ; Katiyar, Ram S.</creatorcontrib><description>The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Capacitance-Voltage characteristics showed negligible hysteresis, ~8 mV. The extracted dielectric constant (k) of LGO layer from the EOT-physical thickness plot was ~21.6 ± 1.7. LGO layers with EOT of 3nm had a Jg ~ 3 x 10 -8 A/cm 2 at accumulation (Vg=V FB -1). The estimated interfacial trap density at the flatband voltage as determined by Lehovec method was in the range 10 12 eV -1 cm -2 . N-channel LGO metal-oxide-semiconductor field effect transistors (MOSFET) have been fabricated and electrically characterized. The threshold voltage (V t ) was ~0.3V.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3568872</identifier><language>eng</language><ispartof>ECS transactions, 2011-04, Vol.35 (2), p.297-304</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c742-2f4236c84e5f1d58a9a2293c5496e245f6c9eb771d5b119877f60b2f9087a0c53</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Pavunny, Shojan P.</creatorcontrib><creatorcontrib>Thomas, R.</creatorcontrib><creatorcontrib>Kalkur, T.S.</creatorcontrib><creatorcontrib>Schubert, Jurgen</creatorcontrib><creatorcontrib>Fachini, E.</creatorcontrib><creatorcontrib>Katiyar, Ram S.</creatorcontrib><title>Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors</title><title>ECS transactions</title><description>The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Capacitance-Voltage characteristics showed negligible hysteresis, ~8 mV. The extracted dielectric constant (k) of LGO layer from the EOT-physical thickness plot was ~21.6 ± 1.7. LGO layers with EOT of 3nm had a Jg ~ 3 x 10 -8 A/cm 2 at accumulation (Vg=V FB -1). The estimated interfacial trap density at the flatband voltage as determined by Lehovec method was in the range 10 12 eV -1 cm -2 . N-channel LGO metal-oxide-semiconductor field effect transistors (MOSFET) have been fabricated and electrically characterized. The threshold voltage (V t ) was ~0.3V.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotkDtPwzAUhS0EEqUw8A-8MqT4Eb9GFDUtUqQu2aMbxyaGNEF2Fvj1pDTTPbrnnG84CD1TsqM0N690x4XUWrEbtKGG60wqrm5XLbRk9-ghpU9C5BJXG-RKaGOwMIdpxDB2eD84O18-Ay56iGBnF8Pv1Z88PoaPPvvCFRy6E-a47sOIyzCc03-5DG5YEN4vDFxHGFNI8xTTI7rzMCT3tN4tqst9XRyz6nR4L96qzKqcZcznjEurcyc87YQGA4wZbkVupGO58NIa1yq1eC2lRivlJWmZN0QrIFbwLXq5Ym2cUorON98xnCH-NJQ0l3ka2qzz8D9YjVY_</recordid><startdate>20110425</startdate><enddate>20110425</enddate><creator>Pavunny, Shojan P.</creator><creator>Thomas, R.</creator><creator>Kalkur, T.S.</creator><creator>Schubert, Jurgen</creator><creator>Fachini, E.</creator><creator>Katiyar, Ram S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110425</creationdate><title>Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors</title><author>Pavunny, Shojan P. ; Thomas, R. ; Kalkur, T.S. ; Schubert, Jurgen ; Fachini, E. ; Katiyar, Ram S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c742-2f4236c84e5f1d58a9a2293c5496e245f6c9eb771d5b119877f60b2f9087a0c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Pavunny, Shojan P.</creatorcontrib><creatorcontrib>Thomas, R.</creatorcontrib><creatorcontrib>Kalkur, T.S.</creatorcontrib><creatorcontrib>Schubert, Jurgen</creatorcontrib><creatorcontrib>Fachini, E.</creatorcontrib><creatorcontrib>Katiyar, Ram S.</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pavunny, Shojan P.</au><au>Thomas, R.</au><au>Kalkur, T.S.</au><au>Schubert, Jurgen</au><au>Fachini, E.</au><au>Katiyar, Ram S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors</atitle><jtitle>ECS transactions</jtitle><date>2011-04-25</date><risdate>2011</risdate><volume>35</volume><issue>2</issue><spage>297</spage><epage>304</epage><pages>297-304</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>The electrical properties of LaGdO 3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiO x /p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (J g ) were determined on metal-oxide-semiconductor (MOS) structures. Capacitance-Voltage characteristics showed negligible hysteresis, ~8 mV. The extracted dielectric constant (k) of LGO layer from the EOT-physical thickness plot was ~21.6 ± 1.7. LGO layers with EOT of 3nm had a Jg ~ 3 x 10 -8 A/cm 2 at accumulation (Vg=V FB -1). The estimated interfacial trap density at the flatband voltage as determined by Lehovec method was in the range 10 12 eV -1 cm -2 . N-channel LGO metal-oxide-semiconductor field effect transistors (MOSFET) have been fabricated and electrically characterized. The threshold voltage (V t ) was ~0.3V.</abstract><doi>10.1149/1.3568872</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2011-04, Vol.35 (2), p.297-304
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_3568872
source Institute of Physics
title Fabrication and Electrical Characterization of High-k LaGdO 3 Thin Films and Field Effect Transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T20%3A25%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20and%20Electrical%20Characterization%20of%20High-k%20LaGdO%203%20Thin%20Films%20and%20Field%20Effect%20Transistors&rft.jtitle=ECS%20transactions&rft.au=Pavunny,%20Shojan%20P.&rft.date=2011-04-25&rft.volume=35&rft.issue=2&rft.spage=297&rft.epage=304&rft.pages=297-304&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.3568872&rft_dat=%3Ccrossref%3E10_1149_1_3568872%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c742-2f4236c84e5f1d58a9a2293c5496e245f6c9eb771d5b119877f60b2f9087a0c53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true