Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures

This work investigates the behavior of Ultra Thin BOX (UTBOX) FDSOI devices used as a memory cell 1T-DRAM (single transistor dynamic random access memory) at high temperatures through 2D numerical simulations. The minimum drain voltage for the onset of the bipolar junction transistor (BJT) effect (V...

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Bibliographic Details
Main Authors: Almeida, Luciano M., Sasaki, Katia R., Aoulaiche, Marc, Simoen, Eddy, Claeys, Cor, Martino, João A.
Format: Conference Proceeding
Language:English
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Summary:This work investigates the behavior of Ultra Thin BOX (UTBOX) FDSOI devices used as a memory cell 1T-DRAM (single transistor dynamic random access memory) at high temperatures through 2D numerical simulations. The minimum drain voltage for the onset of the bipolar junction transistor (BJT) effect (VLatch) was obtained for various buried oxide thickness (tbox) and silicon film thickness (tSi). The simulation results clearly show that, when temperature increases, the VLatch, the sense margin current (ΔISENSE), the latch time (tLatch) and the retention time decreases.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3615177