(Invited) High Power Normally-Off GaN MOSFET

The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN. The SiO2 was applied for the gate oxide of GaN M...

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Bibliographic Details
Main Authors: Kambayashi, Hiroshi, Satoh, Yoshihiro, Kokawa, Takuya, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro
Format: Conference Proceeding
Language:English
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Summary:The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN. The SiO2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300oC. Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3631488