Elastic Relaxation Evaluation in SiGe/Si Hetero-Epitaxial Structures

In this paper, the impact of downscaling the geometry on the stress levels of SiGe/Si hetero-epitaxial structures is investigated by two different experimental techniques, i.e., Raman spectroscopy and High-Resolution X-ray diffraction analysis. The experimental results are complemented by finite ele...

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Bibliographic Details
Main Authors: Gonzalez, Mireia B., Naka, Nobuyuki, Hikavyy, Andriy, Eneman, Geert, Loo, Roger, Simoen, Eddy, Claeys, Cor
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:In this paper, the impact of downscaling the geometry on the stress levels of SiGe/Si hetero-epitaxial structures is investigated by two different experimental techniques, i.e., Raman spectroscopy and High-Resolution X-ray diffraction analysis. The experimental results are complemented by finite element stress simulations. It is shown that the lowest stress levels are obtained for window sizes lower than 5 um wide, and moreover, for a larger epitaxial thickness. As is discussed, this dependence is connected with elastic relaxation at the edges of the SiGe epilayers.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3633298