Copper-ALD Seed Layer as an Enabler for Device Scaling

Copper-seed layer deposition by plasma enhanced atomic layer deposition (PEALD) has been developed and characterized using a recently introduced copper precursor, AbaCus. Film properties such as composition, grain size and resistivity have been studied. Electroplated structures were successfully fil...

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Main Authors: Mao, Jiajun, Eisenbraun, Eric, Omarjee, Vincent, Korolev, Andrey, Dussarrat, Christian
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Eisenbraun, Eric
Omarjee, Vincent
Korolev, Andrey
Dussarrat, Christian
description Copper-seed layer deposition by plasma enhanced atomic layer deposition (PEALD) has been developed and characterized using a recently introduced copper precursor, AbaCus. Film properties such as composition, grain size and resistivity have been studied. Electroplated structures were successfully filled, demonstrating a high potential of this process for use in advanced interconnect technologies.
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title Copper-ALD Seed Layer as an Enabler for Device Scaling
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