Recession and Characterization of Patterned Nanowires Grown by Electroless Etching of Silicon

Abstract-Silicon nanowires (SiNWs) were grown by the electroless etching technique using silver nitrate (AgNO3)/hydrofluoric acid (HF) solution on a patterned p-type Silicon (Si) substrate with varying etching times. The various etch times produced different recession depths wherever the pattern all...

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Bibliographic Details
Main Authors: Mertens, Robert G., Sundaram, Kalpathy B.
Format: Conference Proceeding
Language:English
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Summary:Abstract-Silicon nanowires (SiNWs) were grown by the electroless etching technique using silver nitrate (AgNO3)/hydrofluoric acid (HF) solution on a patterned p-type Silicon (Si) substrate with varying etching times. The various etch times produced different recession depths wherever the pattern allowed the etching solution to contact the Silicon substrate. At the bottom of each recession, SiNWs were produced of varying length and size, according to the depth of the recession. In this type of growth procedure, SiNWs are grown but the tips are etched away. SiNWs grown by this method tend to agglomerate or bunch at their tips.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3640405