(Invited) Semiconductor Nanocrystals Embedded in High-k Materials

The combination of high-k materials and nanocrystalline semiconductors leads to remarkable properties for various applications. The phase separation of ZrGeO and ZrSiO films in superlattice geometries were investigated. In case of the Si containing films, round-shaped clusters within a crystalline Z...

Full description

Saved in:
Bibliographic Details
Main Authors: Benner, Frank, Haas, Sven, Schneider, Frank, Klemm, Volker, Schreiber, Gerhard, Von Borany, Johannes, Heitmann, Johannes
Format: Conference Proceeding
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 16
container_issue 3
container_start_page 9
container_title
container_volume 45
creator Benner, Frank
Haas, Sven
Schneider, Frank
Klemm, Volker
Schreiber, Gerhard
Von Borany, Johannes
Heitmann, Johannes
description The combination of high-k materials and nanocrystalline semiconductors leads to remarkable properties for various applications. The phase separation of ZrGeO and ZrSiO films in superlattice geometries were investigated. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1000 °C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of Ge nanocrystals was observed after annealing at 650 °C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.
doi_str_mv 10.1149/1.3700867
format conference_proceeding
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3700867</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/1.3700867</sourcerecordid><originalsourceid>FETCH-LOGICAL-c219t-68cb5a95a56848c6aa73e80c7e1440b973dfe53dc20e5989e7dbb94f59302c053</originalsourceid><addsrcrecordid>eNptj01LAzEYhIMoWKsH_0Eugj1sTTabr2MprS1UPajnkE3e1VS7KclW6L93pXv0NAPzMMwgdEvJlNJKP9Apk4QoIc_QiGqmCiGZPB88V6K8RFc5bwkRPS5HaHa_bn9CB36CX2EXXGz9wXUx4WfbRpeOubPfGS92NXgPHocWr8LHZ_GFn2wHKfThNbpoeoGbQcfofbl4m6-Kzcvjej7bFK6kuiuEcjW3mlsuVKWcsFYyUMRJoFVFai2Zb4Az70oCXCsN0te1rhquGSkd4WyMJqdel2LOCRqzT2Fn09FQYv6-G2qG7z17d2JD3JttPKS2X_YP9wu3uFYp</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>(Invited) Semiconductor Nanocrystals Embedded in High-k Materials</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Benner, Frank ; Haas, Sven ; Schneider, Frank ; Klemm, Volker ; Schreiber, Gerhard ; Von Borany, Johannes ; Heitmann, Johannes</creator><creatorcontrib>Benner, Frank ; Haas, Sven ; Schneider, Frank ; Klemm, Volker ; Schreiber, Gerhard ; Von Borany, Johannes ; Heitmann, Johannes</creatorcontrib><description>The combination of high-k materials and nanocrystalline semiconductors leads to remarkable properties for various applications. The phase separation of ZrGeO and ZrSiO films in superlattice geometries were investigated. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1000 °C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of Ge nanocrystals was observed after annealing at 650 °C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3700867</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2012, Vol.45 (3), p.9-16</ispartof><rights>2012 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Benner, Frank</creatorcontrib><creatorcontrib>Haas, Sven</creatorcontrib><creatorcontrib>Schneider, Frank</creatorcontrib><creatorcontrib>Klemm, Volker</creatorcontrib><creatorcontrib>Schreiber, Gerhard</creatorcontrib><creatorcontrib>Von Borany, Johannes</creatorcontrib><creatorcontrib>Heitmann, Johannes</creatorcontrib><title>(Invited) Semiconductor Nanocrystals Embedded in High-k Materials</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>The combination of high-k materials and nanocrystalline semiconductors leads to remarkable properties for various applications. The phase separation of ZrGeO and ZrSiO films in superlattice geometries were investigated. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1000 °C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of Ge nanocrystals was observed after annealing at 650 °C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNptj01LAzEYhIMoWKsH_0Eugj1sTTabr2MprS1UPajnkE3e1VS7KclW6L93pXv0NAPzMMwgdEvJlNJKP9Apk4QoIc_QiGqmCiGZPB88V6K8RFc5bwkRPS5HaHa_bn9CB36CX2EXXGz9wXUx4WfbRpeOubPfGS92NXgPHocWr8LHZ_GFn2wHKfThNbpoeoGbQcfofbl4m6-Kzcvjej7bFK6kuiuEcjW3mlsuVKWcsFYyUMRJoFVFai2Zb4Az70oCXCsN0te1rhquGSkd4WyMJqdel2LOCRqzT2Fn09FQYv6-G2qG7z17d2JD3JttPKS2X_YP9wu3uFYp</recordid><startdate>20120427</startdate><enddate>20120427</enddate><creator>Benner, Frank</creator><creator>Haas, Sven</creator><creator>Schneider, Frank</creator><creator>Klemm, Volker</creator><creator>Schreiber, Gerhard</creator><creator>Von Borany, Johannes</creator><creator>Heitmann, Johannes</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120427</creationdate><title>(Invited) Semiconductor Nanocrystals Embedded in High-k Materials</title><author>Benner, Frank ; Haas, Sven ; Schneider, Frank ; Klemm, Volker ; Schreiber, Gerhard ; Von Borany, Johannes ; Heitmann, Johannes</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c219t-68cb5a95a56848c6aa73e80c7e1440b973dfe53dc20e5989e7dbb94f59302c053</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Benner, Frank</creatorcontrib><creatorcontrib>Haas, Sven</creatorcontrib><creatorcontrib>Schneider, Frank</creatorcontrib><creatorcontrib>Klemm, Volker</creatorcontrib><creatorcontrib>Schreiber, Gerhard</creatorcontrib><creatorcontrib>Von Borany, Johannes</creatorcontrib><creatorcontrib>Heitmann, Johannes</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Benner, Frank</au><au>Haas, Sven</au><au>Schneider, Frank</au><au>Klemm, Volker</au><au>Schreiber, Gerhard</au><au>Von Borany, Johannes</au><au>Heitmann, Johannes</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>(Invited) Semiconductor Nanocrystals Embedded in High-k Materials</atitle><btitle>ECS transactions</btitle><addtitle>ECS Trans</addtitle><date>2012-04-27</date><risdate>2012</risdate><volume>45</volume><issue>3</issue><spage>9</spage><epage>16</epage><pages>9-16</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>The combination of high-k materials and nanocrystalline semiconductors leads to remarkable properties for various applications. The phase separation of ZrGeO and ZrSiO films in superlattice geometries were investigated. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1000 °C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of Ge nanocrystals was observed after annealing at 650 °C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/1.3700867</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2012, Vol.45 (3), p.9-16
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_3700867
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title (Invited) Semiconductor Nanocrystals Embedded in High-k Materials
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T04%3A02%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=(Invited)%20Semiconductor%20Nanocrystals%20Embedded%20in%20High-k%20Materials&rft.btitle=ECS%20transactions&rft.au=Benner,%20Frank&rft.date=2012-04-27&rft.volume=45&rft.issue=3&rft.spage=9&rft.epage=16&rft.pages=9-16&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.3700867&rft_dat=%3Ciop_cross%3E10.1149/1.3700867%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c219t-68cb5a95a56848c6aa73e80c7e1440b973dfe53dc20e5989e7dbb94f59302c053%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true