(Invited) High Speed Copper Electrodeposition for Through Silicon Via(TSV)

• Main Authors: Hayashi, Taro, Kondo, Kazuo, Takeuchi, Minoru, Suzuki, Yushi, Saito, Takeyasu, Okamoto, Naoki, Marunaka, Masao, Tsuchiya, Takayuki, Bunya, Masaru
• Format: Conference Proceeding
• Language: English
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.4717502

High-speed copper electrodeposition is needed to optimize the TSV process with a high throughput. To inhibit electrodeposition on the top surface of the TSV, the ODT was microcontact-printed on the top surface. The ODT microcontact-printing effectively inhibits the copper electrodepositon on the top surface. With 1.0 ppm SDDACC, V-shapes were formed in the via cross sections and these shapes lead to bottom-up via filling [1]. Without micro-contact-printing, and with 1.5 ppm SDDACC, V-shapes were again formed in the via cross sections and these shapes lead to bottom-up via filling. We succeeded in filling 10 μm diameter and 70 μm deep vias within 35 minutes without micro- contact-printing. This was achieved by optimizing the SDDACC concentration with CVS measurements. The inhibition layer of the micro-contact-printing does not speed up the TSV electrodeposition. The most important factor to speed up the TSV electrodeposition is optimization of the additives.