Trap States in p-NiO/n-Ga 2 O 3 Heterojunctions on Czochralski β-Ga 2 O 3 Crystals

• Published in: ECS journal of solid state science and technology 2024-12, Vol.13 (12), p.123004
• Main Authors: Nikolaev, V. I., Polyakov, A. Y., Krymov, V. M., Saranin, D. S., Chernykh, A. V., Vasilev, A. A., Schemerov, I. V., Romanov, A. A., Matros, N. R., Kochkova, A. I., Gostishchev, P., Chernykh, S. V., Shapenkov, S. V., Butenko, P. N., Yakimov, E. B., Pearton, S. J.
• Format: Article
• Language: English
• ISSN: 2162-8769; 2162-8777
• DOI: 10.1149/2162-8777/ad9ace

Heterojunctions (HJs) of p-NiO/n-Ga 2 O 3 were prepared by deposition of thin films of p-NiO by ion beam sputtering on bulk nominally undoped (100) oriented n-Ga 2 O 3 samples cleaved from Czochralski-grown (010) oriented crystal. Electrical properties and deep traps spectra were studied and compared with those obtained for similar samples with Ni Schottky diodes. Characteristic features of the NiO/Ga 2 O 3 HJs are the built-in voltage of over 2 V compared to 1 V in Ni Schottky diodes, a strong frequency dispersion of capacitance due to the presence of high density over 10 18 cm −3 of E c -0.16 eV traps in the thin region adjacent to the NiO/Ga 2 O 3 interface. For heterojunction diodes the strong increase of reverse current occurs at a much higher voltage than for Schottky diodes (120 V versus 60 V).