X-ray Photoelectron Spectroscopic Investigation of Air-Annealed Amorphous In-Ga-Zn-O Thin-Film Surface

Amorphous In-Ga-Zn-O (a-IGZO) thin-film surfaces were air annealed at 150°C, 300°C, and 400°C for 10 minutes, after which the X-ray photoelectron spectroscopic (XPS) spectral changes were investigated. The data show that air annealing decreased the densities of the oxygen-vacancy-representing states...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2013-01, Vol.2 (9), p.Q192-Q194
Main Authors: Kang, Se Jun, Baik, Jaeyoon, Shin, Hyun-Joon, Chung, JaeGwan, Kim, K. H., Lee, Jaecheol
Format: Article
Language:English
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Summary:Amorphous In-Ga-Zn-O (a-IGZO) thin-film surfaces were air annealed at 150°C, 300°C, and 400°C for 10 minutes, after which the X-ray photoelectron spectroscopic (XPS) spectral changes were investigated. The data show that air annealing decreased the densities of the oxygen-vacancy-representing states and generated the contaminant component at the O 1s peak. The contaminant component's intensity there decreased as the annealing temperature was increased above 300°C. As the annealing temperature was increased to 400°C, the intensities of O 1s and Zn 3d relative to that of Ga 3d increased by ∼100% and ∼130%, respectively, whereas the intensity of In 3d, relative to that of Ga 3d, decreased by ∼30%.
ISSN:2162-8769
2162-8777
DOI:10.1149/2.004311jss