Positive Threshold-Voltage Shift of Y 2 O 3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2014, Vol.3 (6), p.Q120-Q126
Main Authors: Bera, M. K., Liu, Y., Kyaw, L. M., Ngoo, Y. J., Singh, S. P., Chor, E. F.
Format: Article
Language:English
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ISSN:2162-8769
2162-8777
DOI:10.1149/2.011406jss