Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor

A quick cleaning process was developed for a silicon carbide chemical vapor deposition reactor. For this purpose, the stability of the susceptor coating film made of pyrolytic carbon was evaluated by means of exposing it to 100% chlorine trifluoride gas for 10 min at various temperatures. The origin...

Full description

Saved in:
Bibliographic Details
Published in:ECS journal of solid state science and technology 2017-01, Vol.6 (8), p.P526-P530
Main Authors: Shioda, Kohei, Kurashima, Keisuke, Habuka, Hitoshi, Ito, Hideki, Mitani, Shin-ichi, Takahashi, Yoshinao
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A quick cleaning process was developed for a silicon carbide chemical vapor deposition reactor. For this purpose, the stability of the susceptor coating film made of pyrolytic carbon was evaluated by means of exposing it to 100% chlorine trifluoride gas for 10 min at various temperatures. The original surface morphology of the pyrolytic carbon film was maintained under 480°C. The fluorine atoms incorporated into the pyrolytic carbon film were removed by annealing at 900°C either in ambient hydrogen or in ambient nitrogen. Finally, the 30-μm thick silicon carbide film formed on the pyrolytic carbon was successfully cleaned by the chlorine trifluoride gas either at 400°C for 30 min or at 460°C for 15 min and by additional annealing in ambient nitrogen at 900°C.
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0161708jss