An Analytical Model for Ballistic Carbon Nanotube Field Effect Transistor Applicable to Circuit Simulators

FETToy is a numerical reference method used for modeling of the nano-transistors in the purely ballistic transport limit. Because of the existence of integral equation in the calculation of the charge distribution, there is no possibility of using this model in the commercially available circuit sim...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2017-01, Vol.6 (9), p.M109-M113
Main Authors: Yousefi, Reza, Ghoreishi, Seyed Saleh, Kabir, Mostafa
Format: Article
Language:English
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Summary:FETToy is a numerical reference method used for modeling of the nano-transistors in the purely ballistic transport limit. Because of the existence of integral equation in the calculation of the charge distribution, there is no possibility of using this model in the commercially available circuit simulators, such as SPICE. A number of different analytical solutions for estimating the charge integral equation have been proposed. In this research, one of these models is modified in such a way that the proposed model has a higher accuracy in different conditions. Simulation results show that in terms of various physical parameters and bias values, the modified model exhibits superior accuracy in comparison with the abovementioned reference.
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0271709jss