Electrodeposition of Crystalline HgTe from a Non-Aqueous Plating Bath

This paper presents a method for the electrodeposition of stoichiometric, crystalline HgTe, which provides advantages over conventional HgTe preparation techniques, such as physical and chemical vapor deposition, in a number of ways; e.g. fast deposition rates (2 μm/hr) and the ability to reliably p...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2018, Vol.165 (16), p.D802-D807
Main Authors: Kissling, Gabriela P., Aziz, Mohsin, Lodge, Andrew W., Zhang, Wenjian, Alibouri, Mehrdad, Huang, Ruomeng, Hector, Andrew L., Reid, Gillian, de Groot, Cornelis H., Beanland, Richard, Bartlett, Philip N., Smith, David C.
Format: Article
Language:English
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Summary:This paper presents a method for the electrodeposition of stoichiometric, crystalline HgTe, which provides advantages over conventional HgTe preparation techniques, such as physical and chemical vapor deposition, in a number of ways; e.g. fast deposition rates (2 μm/hr) and the ability to reliably produce stoichiometric or near-stoichiometric material. The HgTe is prepared in a dichloromethane based plating bath using [NnBu4]2[TeCl6] and [NnBu4]2[HgCl4] as the precursors for Te and Hg, respectively. The paper details the electrochemical behavior of the plating bath and its components, together with a detailed characterization of the morphology, crystallinity and composition of the prepared HgTe.
ISSN:0013-4651
1945-7111
DOI:10.1149/2.0421816jes