Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

• Published in: Advances in optical technologies 2011, Vol.2011 (2011), p.1-8
• Main Authors: Caliman, A., Czyszanowski, Tomasz, Iakovlev, V., Kapon, E., Wasiak, Michał, Walczak, J., Okhotnikov, O., Zhu, Q., Rautiainen, J., Lyytikäinen, J., Mereuta, A., Volet, N., Sirbu, A.
• Format: Article
• Language: English
• Subjects: Optical pumping
• ISSN: 1687-6393; 1687-6407
• DOI: 10.1155/2011/209093

1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with 5 groups of quantum wells shows CW output power of 2.7 W from 180 μm apertures in both the 1300-nm and the 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These VECSELs emit a high-quality beam with M2 beam parameter below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber. Maximum value of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μm aperture size. Based on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.