Analysis of the High Conversion Efficiencies β ‐FeSi 2 and BaSi 2 n‐i‐p Thin Film Solar Cells

• Published in: Journal of nanomaterials 2014-12, Vol.2014 (1)
• Main Authors: Huang, Jung-Sheng, Lee, Kuan-Wei, Tseng, Yu-Hsiang
• Format: Article
• Language: English
• ISSN: 1687-4110; 1687-4129
• DOI: 10.1155/2014/238291

Both β ‐FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si‐based new materials for solar cell applications. In this paper, the dc I ‐ V characteristics of n‐Si/i‐ β FeSi 2 /p‐Si and n‐Si/i‐BaSi 2 /p‐Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I ‐ V curves. The optimum conversion efficiency of n‐Si/i‐ β FeSi 2 /p‐Si thin film solar cell is 27.8% and that of n‐Si/i‐BaSi 2 /p‐Si thin film solar cell is 30.4%, both are larger than that of Si n‐i‐p solar cell ( η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n‐i‐p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.