High Reliability and Fast‐Speed Phase‐Change Memory Based on Sb 70 Se 30 /SiO 2 Multilayer Thin Films

Sb 70 Se 30 /SiO 2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO 2 /Si (100) substrates. The characteristics of Sb 70 Se 30 /SiO 2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and...

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Bibliographic Details
Published in:Advances in materials science and engineering 2018-01, Vol.2018 (1)
Main Authors: Zhang, Dan, Hu, Yifeng, You, Haipeng, Zhu, Xiaoqin, Sun, Yuemei, Zou, Hua, Zheng, Yan
Format: Article
Language:English
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Summary:Sb 70 Se 30 /SiO 2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO 2 /Si (100) substrates. The characteristics of Sb 70 Se 30 /SiO 2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10‐year data retention, and resistance of Sb 70 Se 30 /SiO 2 multilayer composite thin films exhibited a higher value, suggesting that Sb 70 Se 30 /SiO 2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that the SbSe (1 nm)/SiO (9 nm) multilayer thin films possess a smaller surface roughness (RMS = 0.23 nm). Besides, it was found that the phase‐change time of SbSe (1 nm)/SiO (9 nm) multilayer thin films was shorter than that of GST in the process of crystallization and amorphization.
ISSN:1687-8434
1687-8442
DOI:10.1155/2018/9693015