Tunneling current in magnetic-ferroelectric-superconducting heterostructures

We report the tunneling current behavior of magnetic-ferroelectric-superconducting heterostructures for multistates non-volatile random access memory (NVRAM) elements. A heterostructure of La0.67Sr0.33MnO3 (LSMO) (50 nm)/PbZr0.52Ti0.48O3 (PZT) (5 nm)/Bi-Sr-Ca-Cu2-OX (BSCCO) (100 nm)/LaAlO3 (LAO) arc...

Full description

Saved in:
Bibliographic Details
Published in:Europhysics letters 2018-06, Vol.122 (5), p.57002
Main Authors: Ravikant, Rakshit, Rajib K., Singh, Manju, Katiyar, R. S., Ojha, V. N., Kumar, Ashok
Format: Article
Language:English
Subjects:
74.25.-q
77.80.-e
85.25.Hv
Bismuth strontium calcium copper oxide
Coercivity
Ferroelectric materials
Ferroelectricity
Heterostructures
Phase transitions
Polarization
Pulsed laser deposition
Pulsed lasers
Random access memory
Superconductivity
Transition temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the tunneling current behavior of magnetic-ferroelectric-superconducting heterostructures for multistates non-volatile random access memory (NVRAM) elements. A heterostructure of La0.67Sr0.33MnO3 (LSMO) (50 nm)/PbZr0.52Ti0.48O3 (PZT) (5 nm)/Bi-Sr-Ca-Cu2-OX (BSCCO) (100 nm)/LaAlO3 (LAO) architecture was fabricated by pulsed laser deposition technique. The tunneling effects were investigated well above and below the superconducting phase transition temperature of the BSCCO bottom electrode. A divergent current and conductance paths were observed for polarization up and down direction above the coercive field of the ferroelectric tunnel barrier. This behaviour was significant below Ts where the moderate effect of the external magnetic field was also observed on the tunneling current. The dynamic conductance G(V) data fitted well with Brinkman's model for both polarizations up and polarization down states which suggest the presence of large tunnel electro-resistance.
ISSN:0295-5075
1286-4854
1286-4854
DOI:10.1209/0295-5075/122/57002